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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
FDP51N25 / FDPF51N25
250V N-Channel MOSFET
Features
* * * * * 51A, 250V, RDS(on) = 0.06 @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 63 pF) Fast switching Improved dv/dt capability
UniFETTM
July 2008
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDP51N25
51 30 204
FDPF51N25
250 51* 30* 204*
Unit
V A A A V mJ A mJ V/ns
30 1111 51 32 4.5 320 3.7 -55 to +150 300 38 0.3
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FDP51N25
0.39 0.5 62.5
FDPF51N25
3.3 -62.5
Unit
C/W C/W C/WJ
(c)2008 Fairchild Semiconductor Corporation
1
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FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP51N25 FDPF51N25
Device
FDP51N25 FDPF51N25
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 250V, VGS = 0V VDS = 200V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 25.5A VDS = 40V, ID = 25.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
250 -----3.0 ------
Typ
-0.25 -----0.048 43 2620 530 63 62 465 98 130 55 16 27 ---178 4.0
Max Units
--1 10 100 -100 5.0 0.060 -3410 690 90 135 940 205 270 70 --51 204 1.4 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 125V, ID = 51A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 200V, ID = 51A VGS = 10V
------
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 51A VGS = 0V, IS = 51A dIF/dt =100A/s
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.68mH, IAS = 51A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 51A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP51N25 / FDPF51N25 Rev. B
2
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
VGS
10
2
Top :
ID, Drain Current [A]
ID, Drain Current [A]
15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
10
2
150 C
10
1
o
10
1
25 C -55 C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
o
o
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
10
0
10
-1
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
RDS(ON) [], Drain-Source On-Resistance
0.14
10
0.12
2
0.10
VGS = 10V
IDR, Reverse Drain Current [A]
0.08
10
1
VGS = 20V
0.06
150 C 25 C
o
o
0.04 0 25 50 75 100
* Note : TJ = 25 C
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test
125
150
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
6000
Ciss = Cgs + Cgd (Cds = shorted) Crss = Cgd Coss = Cds + Cgd
Figure 6. Gate Charge Characteristics
12
10
VGS, Gate-Source Voltage [V]
VDS = 50V VDS = 125V VDS = 200V
Capacitances [pF]
4000
Coss Ciss
8
6
4
2000
Crss
* Note ; 1. VGS = 0 V 2. f = 1 MHz
2
* Note : ID = 51A
0
0 -1 10
0
10
20
30
40
50
60
10
0
10
1
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP51N25 / FDPF51N25 Rev. B
3
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 25.5 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FDP51N25
Figure 9-2. Maximum Safe Operating Area for FDPF51N25
10
2
10 s 100 s 1 ms 10 ms 100 ms DC
10
2
10 s 100 s 1 ms 10 ms
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
10
1
ID, Drain Current [A]
10
1
Operation in This Area is Limited by R DS(on)
100 ms DC
10
0
10
0
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-2
10
0
10
1
10
2
10
-2
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
60
50
ID, Drain Current [A]
40
30
20
10
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
FDP51N25 / FDPF51N25 Rev. B
4
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP51N25
ZJC(t), Thermal Response
D=0.5
10
-1
0.2 0.1 0.05 0.02
-2
PDM t1 t2
10
0.01
* Notes : 0 1. Z JC (t) = 0.39 C/W Max. 2. Duty Factor, D=t1 /t 2
single pulse
10
-5
3. T JM - T C = P DM * Z JC (t)
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF51N25
D=0.5
ZJC(t), Thermal Response
10
0
0.2 0.1 0.05
10
-1
PDM t1 t2
0.02 0.01
* Notes : 0 1. ZJC(t) = 3.3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
FDP51N25 / FDPF51N25 Rev. B
5
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP51N25 / FDPF51N25 Rev. B
6
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP51N25 / FDPF51N25 Rev. B
7
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP51N25 / FDPF51N25 Rev. B
8
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FDP51N25 / FDPF51N25 Rev. B
9
15.87 0.20
www.fairchildsemi.com
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
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Rev. I35
10 FDP51N25 / FDPF51N25 Rev. B
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